Electronic Component Testing by W. F. Waller (eds.)

By W. F. Waller (eds.)

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Extra resources for Electronic Component Testing

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The other material in use is gallium arsenide which offers high efficiency and operation at. higher frequencies than silicon. Silicon varactors are normally used at J-band (12-18 GHz) and below, and gallium arsenide devices are more appropriate for operation at Q-band (26-40 GHz). 2. ,, :g . - - - - - - - METALLISED CONTACT : OXIDE n- TYPE EPITAXIAL LAYER ~~~i~r~:igs~~~~2T Fig. l . Diffused planar epitaxial construction used for silicon uaractors. 2. Diffused mesa construction used {or gallium arsenide uaractors.

Within these publications there is considerable detail on circuits for measuring most parameters, certainly those for general purpose semiconductors. Test limits. The test limits applied must be wider than those quoted on the data sheet to allow for the accuracy of the measurement plus any error introduced by measuring the parameter at the incorrect ambient temperature. During manufacture, semiconductor devices are tested to a closer specification than the data sheet to allow for the same factors.

C. - - - . U A ANO B MERCURY WETTED RELAYS 250V oc. intervals, may be required before the reading is taken. It can be appreciated that whilst the junction temperature is raised during the current pulse it drops again before the next pulse and thus more stable and accurate answers will be obtained. 8. The basic circuit shown consists of a low voltage high current transformer in series with a current shunt, thyristor and device under test. The variation in current passing through the test unit is made by the variable transformer feeding the high current transformer.

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